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| NTLJD3115P Power MOSFET Features -20 V, -4.1 A, mCoolt Dual P-Channel, 2x2 mm WDFN Package * WDFN Package Provides Exposed Drain Pad for Excellent Thermal * * * * * * Conduction 2x2 mm Footprint Same as SC-88 Lowest RDS(on) Solution in 2x2 mm Package 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level Low Profile (< 0.8 mm) for Easy Fit in Thin Environments Bidirectional Current Flow with Common Source Configuration This is a Pb-Free Device V(BR)DSS http://onsemi.com RDS(on) MAX 100 mW @ -4.5 V -20 V 135 mW @ -2.5 V 200 mW @ -1.8 V S1 S2 -4.1 A ID MAX (Note 1) Applications G1 G2 * Optimized for Battery and Load Management Applications in Portable Equipment * Li-Ion Battery Charging and Protection Circuits * High Side Load Switch MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Steady State t5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TA = 25C Steady State TA = 85C TA = 25C tp = 10 ms PD IDM TJ, TSTG IS TL ID TA = 25C TA = 85C TA = 25C PD TA = 25C 2.3 -2.3 -1.6 0.71 -20 -55 to 150 -1.9 260 W A C A C A Symbol VDSS VGS ID Value -20 8.0 -3.3 -2.4 -4.1 1.5 W Unit V V A D1 P-CHANNEL MOSFET D2 D1 D2 P-CHANNEL MOSFET MARKING DIAGRAM 1 6 2 JDMG 5 G 3 4 WDFN6 CASE 506AN Pin 1 JD = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) PIN CONNECTIONS D1 S1 G1 D2 1 2 D2 3 4 S2 6 5 D1 G2 Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) (Top View) ORDERING INFORMATION Device NTLJD3115PT1G NTLJD3115PTAG Package WDFN6 (Pb-Free) WDFN6 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTLJD3115P/D (c) Semiconductor Components Industries, LLC, 2006 1 June, 2006 - Rev. 4 NTLJD3115P THERMAL RESISTANCE RATINGS Parameter SINGLE OPERATION (SELF-HEATED) Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - Steady State Min Pad (Note 4) Junction-to-Ambient - t 5 s (Note 3) DUAL OPERATION (EQUALLY HEATED) Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - Steady State Min Pad (Note 4) Junction-to-Ambient - t 5 s (Note 3) RqJA RqJA RqJA 58 133 40 C/W RqJA RqJA RqJA 83 177 54 C/W Symbol Max Unit 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu). http://onsemi.com 2 NTLJD3115P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, ID = -250 mA ID = -250 mA, Ref to 25C TJ = 25C TJ = 85C -20 9.95 -1.0 -10 100 nA V mV/C mA Symbol Test Conditions Min Typ Max Unit VDS = -16 V, VGS = 0 V Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Gate Threshold Temperature Coefficient Drain-to-Source On-Resistance IGSS VDS = 0 V, VGS = 8.0 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = -250 mA -0.4 -0.7 2.44 -1.0 V mV/C VGS = -4.5, ID = -2.0 A VGS = -2.5, ID = -2.0 A VGS = -1.8, ID = -1.6 A 75 101 150 3.1 100 135 200 mW Forward Transconductance gFS VDS = -5.0 V, ID = -2.0 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -10 V, ID = -2.0 A, RG = 2.0 W VGS = -4.5 V, VDD = -5.0 V, ID = -1.0 A, RG = 6.0 W 5.2 13.2 13.7 19.1 5.5 15 19.8 21.6 ns ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD RG VGS = -4.5 V, VDS = -10 V, ID = -2.0 A VGS = 0 V, f = 1.0 MHz, VDS = -10 V 531 91 56 5.5 0.7 1.0 1.4 8.8 W 6.2 nC pF DRAIN-SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage VSD VGS = 0 V, IS = -1.0 A TJ = 25C TJ = 125C -0.75 -0.64 16.2 VGS = 0 V, dISD/dt = 100 A/ms, IS = -1.0 A 10.6 5.6 5.7 nC ns -1.0 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time tRR ta tb QRR 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTLJD3115P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 5 -ID, DRAIN CURRENT (AMPS) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 -1.5 V -1.4 V -1.3 V -1.2 V 4 4.5 -1.7 V -1.6 V VGS = -1.9 V to -6 V TJ = 25C -1.8 V -ID, DRAIN CURRENT (AMPS) 5 VDS 10 V 4 3 2 TJ = 25C 1 TJ = 125C 0 0 0.5 1 TJ = -55C 1.5 2 2.5 3 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.1 VGS = -4.5 V 0.09 0.08 0.07 0.06 0.05 0.04 1.0 TJ = 25C TJ = 100C 0.15 TJ = 25C VGS = -2.5 V 0.1 VGS = -4.5 V TJ = -55C 0.05 1.5 2.0 2.5 0 1 2 3 4 5 -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Drain Current Figure 4. On-Resistance versus Drain Current and Gate Voltage 10000 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 ID = -2.2 A VGS = -4.5 V 1.4 -IDSS, LEAKAGE (nA) VGS = 0 V TJ = 150C 1000 1.2 1.0 100 TJ = 100C 0.8 0.6 -50 -25 0 25 50 75 100 125 150 10 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 4 NTLJD3115P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VDS = 0 V VGS = 0 V 1000 C, CAPACITANCE (pF) 800 600 400 200 0 5 VGS 0 VDS 5 10 15 20 Crss Coss Ciss TJ = 25C -V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1200 5 QT 4 20 -V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 16 3 VDS QGS QGD VGS 12 2 8 1 ID = -2.2 A TJ = 25C 0 0 1 5 2 3 4 QG, TOTAL GATE CHARGE (nC) 6 4 0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 -Is, SOURCE CURRENT (AMPS) VDD = -15 V ID = -2.2 A VGS = -4.5 V t, TIME (ns) 100 tf tr 10 td(off) td(on) Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge 3 VGS = 0 V 2.5 2 1.5 1 0.5 0 0 TJ = 150C 0.1 0.2 0.3 0.4 0.5 0.6 TJ = 25C 0.7 0.8 0.9 1.0 1 1 10 RG, GATE RESISTANCE (OHMS) 100 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 100 -ID, DRAIN CURRENT (AMPS) TC = 25C TJ = 150C SINGLE PULSE 10 ms 100 ms 1 ms 1 10 ms *See Note 2 on Page 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 dc 10 0.1 0.01 10 1 100 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 NTLJD3115P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 100 D = 0.5 0.2 0.1 *See Note 2 on Page 1 P(pk) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RqJA(t) 10 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 t1 t2 DUTY CYCLE, D = t1/t2 0.01 t, TIME (s) 0.1 1 10 100 1000 Figure 12. Thermal Response http://onsemi.com 6 NTLJD3115P PACKAGE DIMENSIONS WDFN6, 2x2 CASE 506AN-01 ISSUE B D A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 E E2 e K L J MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 0.57 0.77 2.00 BSC 0.90 1.10 0.65 BSC 0.25 REF 0.20 0.30 0.15 REF PIN ONE REFERENCE E 2X 0.10 C 2X 0.10 C 0.10 C 6X 0.08 C D2 6X L 1 3 6X K mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative III III III A3 A1 D2 e 2X E2 6 4 A C SEATING PLANE 6X SOLDERMASK DEFINED MOUNTING FOOTPRINT* 2.30 6X 0.35 4X 0.43 1 0.65 PITCH b 6X 0.25 B 2X 6X J 0.10 C A 0.05 C BOTTOM VIEW NOTE 3 0.72 1.05 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NTLJD3115P/D |
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